Abstract
Junctions to semiconductors are necessary to electrically access to the semiconductors and its characteristics are fundamental for the achievement of devices that can be used both for the material characterization and for commercial uses. In case of ZnO, much effort has been put, recently, into the investigations of methods to achieve metal-semiconductor junctions with good rectifying properties and into understanding the physics behind the different results obtained. In this work the effects on the surface morphology, electrical characteristics and metalsemiconductor interface are studied to achieve high quality diodes on ZnO. In addition, due to the good rectifying performance of the contacts deposited, new results on the nature of electrically active defects present in ZnO could be extracted from capacitance spectroscopy and galvanomagnetic techniques.
List of papers
Paper I Schifano, R.; Monakhov, E. V.; Grossner, U.; Svensson, B. G.: (2007)Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO. Applied Physics Letters, Volume 91, Issue 19, 193507 (3 pages) 2007. The paper is not available in DUO. The published version is available at: https://doi.org/10.1063/1.2806194 |
Paper II Schifano, R.; Monakhov, E. V.; Svensson, B. G.; Diplas, S.: (2009) Surface passivation and interface reactions induced by hydrogen peroxide treatment of n-type ZnO (0001). Applied Physics Letters, Volume 94, Issue 13, 132101 (3 pages), 2009. The paper is not available in DUO. The published version is available at: https://doi.org/10.1063/1.3106052 |
Paper III Schifano, R.; Monakhov, E. V.; Svensson, B. G.; Mtangi, W.; Auret, F. D.: (2009) Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements. Submittet to J. Appl. Phys. The paper is not available in DUO. |
Paper IV Schifano, R.; Monakhov, E. V.; Svensson, B. G.; Mtangi, W.; Janse van Rensburg P. J.; Auret, F. D. (2009) Properties of shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy. Acccepted to be published in physica B: Condensed Matter The paper is not available in DUO. |
Paper V R. Schifano *, E. V. Monakhov, J. S. Christensen, A. Yu. Kuznetsov, B. G. Svensson: (2008) Schottky contacts to hydrogen doped ZnO Physica Status Solidi (A) Volume 2005, Issue 8, 1998-2001, 2008. The paper is not available in DUO. The published version is available at: https://doi.org/10.1002/pssa.200878862 |